IEEE Transactions on Electron Devices · 1998 · 52 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationDopingSemiconductor InterfacesSemiconductor SurfacesElectric Field DistributionElectric Field IntensityField-effect Transistor SimulationGate Oxide Thickness EffectsMetal-oxide-semiconductor Field-effect Transistor ModelingSemiconductor Device ModelingSemiconductor TechnologySilicon-on-insulator Technology
An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.
4