An analytical model for minimum drift region length of SOI RESURF diodes

Abstract

An analytical model for calculating the minimum drift region length of SOI RESURF diodes is presented with an expression for the maximum breakdown voltage of the device. The minimum drift region length is determined from the condition that the maximum breakdown voltage due to the one-dimensional field along the vertical path equals that of the lateral electric field along the surface. Analytical results agree well with the simulations using PISCES II, and qualitatively with the experimental results.