IEEE Electron Device Letters · 1996 · 28 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent DistributionCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationBreakdown MechanismsBreakdown SimulationBreakdown VoltageDiode Current-voltage CharacteristicsDiode ModelingLateral Electric Field Effects
An analytical model for calculating the minimum drift region length of SOI RESURF diodes is presented with an expression for the maximum breakdown voltage of the device. The minimum drift region length is determined from the condition that the maximum breakdown voltage due to the one-dimensional field along the vertical path equals that of the lateral electric field along the surface. Analytical results agree well with the simulations using PISCES II, and qualitatively with the experimental results.
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High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 520 citations
Realization of high breakdown voltage (<700 V) in thin SOI devices
S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 198 citations