IEEE Transactions on Electron Devices · 2008 · 16 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationIii-v SemiconductorsIntegrated Circuit DevicesSemiconductor Device MaterialsBase ResistanceCompact Device ModelingHeterostructure Device ModelingInternal ResistanceLayout Parasitics ModelingLayout-dependent EffectsThree-dimensional Integrated Circuit Layout
In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium HBTs as a function of geometry (layout) is presented. The investigated layouts include single- and double-base contacts not only in parallel but also perpendicular to the emitter finger. In addition, via and slot base contacts, a large range of link to internal-base-sheet-resistance ratio, and changes in external base layout dimensions are covered. The new equations are verified using quasi-3-D device simulation and are demonstrated to be applicable to all practically useful emitter aspect ratios.
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