MRS Proceedings · 1999 · 23 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave MaterialsMicrowave Semiconductor DevicesSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsMicrowave DevicesSemiconductor Materials For Microwave DevicesSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide High-frequency Devices
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4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Electron Device Letters · 1994 · 83 citations