IEEE Electron Device Letters · 1982 · 12 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsDevice ScalingLaser Surface ProcessingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSilicon MaterialsThin-film TransistorsCmos Fabrication ProcessesCmos ScalingGate Stack EngineeringInverter SystemsPolysilicon
The feasibility of building stacked MOSFET's in a single laser recrystallized polysilicon film is demonstrated. Devices fabricated in this initial study use separate gates to obtain independent enhancement mode behavior on each surface of the recrystallized film. The transistors worked simultaneously and inverter action was demonstrated using a CMOS configuration.
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A normally-off type buried channel MOSFET for VLSI circuits
K. Nishiuchi, H. Oka, T. Nakamura et al. · 1978 · 46 citations