Stacked MOSFET's in a single film of laser-recrystallized PolySilicon

Abstract

The feasibility of building stacked MOSFET's in a single laser recrystallized polysilicon film is demonstrated. Devices fabricated in this initial study use separate gates to obtain independent enhancement mode behavior on each surface of the recrystallized film. The transistors worked simultaneously and inverter action was demonstrated using a CMOS configuration.