Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

The growth of crystals and the equilibrium structure of their surfaces

W. K. Burton, N. Cabrera, F. C. Frank · Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences · 1951 · 5.3K citations

Natural Sciences, Physics, Condensed Matter Physics +16

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth and perfection of crystals

W. van Emde Boas · Journal of Physics and Chemistry of Solids · 1959 · 440 citations

Natural Sciences, Materials Engineering, Materials Science +10

Dislocation mediated surface morphology of GaN

B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 407 citations

Natural Sciences, Materials Engineering, Materials Science +17

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 336 citations

Engineering, Electrical Engineering, Materials Science +17