Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]

Abstract

This paper presents an efficient method to evaluate with accuracy the partitioning of the base-collector depletion capacitance through the base resistance by the way of the SPICE Gummel-Poon (SGP) model parameter X/sub CJC/. This parameter is directly extracted, without any optimization, from the real part of the high-frequency small-signal admittance Y/sub 12/ in common emitter configuration.