Concepedia

Graded SiGe-Channel Modulation-Doped p-Mosfets

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, A.C. Megdanis, C. Stanis, A. A. Bright, G. M. W. Kroesen,

1991 · 17 citations · 1 references

DOI

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDopingIntegrated Circuit DesignSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBandgap EngineeringChannel DopingChannel Doping EffectsDevice FabricationModulation Doping

Abstract

Bandgap engineering has been applied to the design and fabrication of graded SiGe-channel modulation-doped p-MOSFETs. The Ge in the channel was graded to control the location of carrier flow and hence optimize the transconductance.

References

1

Charge accumulation and mobility in thin dielectric MOS transistors

C.G. Sodini, T.W. Ekstedt, J.L. Moll · Solid-State Electronics · 1982 · 315 citations

Engineering, Electrical Engineering, Materials Science +14