2005 · 25 citations · 38 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsProcess DynamicsSemiconductor DevicesDevice ReliabilityDielectricsMaterial DegradationSemiconductor ReliabilityBias Temperature InstabilityBreakdown MechanismsDevice DegradationDielectric BreakdownElectrical BreakdownNegative Bias Temperature InstabilityReliability Degradation MechanismsTime-dependent Dielectric Breakdown
One single modification in the back end of line (BEOL) process can change the acceleration behavior of time-dependent dielectric breakdown (TDDB). It is demonstrated that two competing degradation mechanisms exist in parallel, which follow time dependences according to the E-model and the 1/E-model. Negative bias temperature instability (NBTI) tests correlate well with TDDB results. A continuous hydrogen reaction model is introduced, which can explain the experimental results.
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