A fast-switching SOI SA-LIGBT without NDR region

Abstract

The SOI separated shorted-anode LIGBT (SSA-LIGBT) has been investigated by experiments and numerical device simulations. In order to suppresses the negative differential resistance regime which is the inherent drawback of the shorted anode LIGBT (SA-LIGBT), the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path. The SSA-LIGBT shows a remarkably decreased on-state voltage drop when compared with the conventional SA-LIGBT and shows a one-order faster turn-off time than that of the LIGBT.