Dae-Seok Byeon

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

Kitae Park, Sang-Wan Nam, Daehan Kim et al. · IEEE Journal of Solid-State Circuits · 2014 · 280 citations

Engineering, Computer Engineering, Electrical Engineering +15

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

Dongku Kang, Woopyo Jeong, Chulbum Kim et al. · IEEE Journal of Solid-State Circuits · 2016 · 110 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

Seungjae Lee, Chulbum Kim, Minsu Kim et al. · 2018 · 108 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim et al. · IEEE Journal of Solid-State Circuits · 2015 · 98 citations

Engineering, Computer Engineering, Microelectronics +13

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Ki‐Tae Park, Jin-Man Han, Daehan Kim et al. · 2014 · 97 citations

Engineering, Computer Engineering, Electrical Engineering +14