Statistics
Publications
6
Citations
270
H-Index
6
Active since
2014
Daehan Kim is an author at Korea Advanced Institute of Science and Technology specializing in semiconductor devices, microelectronics, and memory devices.
Publications per year
2014–2023
6
6
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim et al. · IEEE Journal of Solid-State Circuits · 2015 · 98 citations
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