S. Mukherjee

Realization of high breakdown voltage (<700 V) in thin SOI devices

S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 198 citations

Electrical Engineering, Semiconductor Device, Engineering +14

Information systems frontiers

Jagdish Chandra, Salvatore T. March, S. Mukherjee et al. · Communications of the ACM · 2000 · 190 citations · Full text

Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 76 citations

Electrical Engineering, Semiconductor Device, Engineering +12

High performance 600 V smart power technology based on thin layer silicon-on-insulator

Ted Letavic, E. Arnold, M. Simpson et al. · 2002 · 70 citations

Engineering, Integrated Circuits, Power Electronics +18

Lateral insulated-gate bipolar transistor (LIGBT) with a segmented anode structure

J.K.O. Sin, S. Mukherjee · IEEE Electron Device Letters · 1991 · 48 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11