2003 · 17 citations · 16 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ScalingIntegrated Circuit DesignBipolar TechnologyCmos ScalingComplementary Metal-oxide-semiconductor ScalingHigh-temperature Device OperationHigh-temperature ElectronicsLow-power Cmos DesignScaling Effects In CmosSpeed
The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
16
Very small MOSFET's for low-temperature operation
F.H. Gaensslen, V.L. Rideout, E.J. Walker et al. · IEEE Transactions on Electron Devices · 1977 · 303 citations
Design of micron MOS switching devices
R.H. Dennard, F.H. Gaensslen, L. Kuhn et al. · 1972 · 113 citations
Operation of bulk CMOS devices at very low temperatures
H. Hanamura, Masashi Aoki, T. Masuhara et al. · IEEE Journal of Solid-State Circuits · 1986 · 101 citations
Engineering, Computer Engineering, Electrical Engineering +14