IEEE Microwave and Guided Wave Letters · 2000 · 37 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignPower AmplifiersWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride Power AmplifiersGallium Nitride Power DevicesHigh-efficiency Power Amplifiers
The first gallium-nitride monolithic distributed amplifier is demonstrated. A nonuniform design allows the removal of the drain line dummy load with a concomitant increase in efficiency, An optimized nonuniform design shows a 10% increase in efficiency over an optimized uniform design having the dummy termination.
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Edward L. Ginzton, William R. Hewlett, J. Jasberg et al. · Proceedings of the IRE · 1948 · 386 citations
MESFET Distributed Amplifier Design Guidelines
J.B. Beyer, S. Prasad, R. Becker et al. · IEEE Transactions on Microwave Theory and Techniques · 1984 · 372 citations