1995 · 13 citations · 13 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportCharge Carrier TransportDevice CharacterizationDevice ModelingDevice SimulationMemory DevicesCarrier Transport MechanismsCharge TransportCharge Transport MechanismsFlash Memory DevicesHot Carrier DynamicsHot Carrier EffectsHot Carrier GenerationHot Carrier Injection
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.
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Fowler-Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger, E. H. Snow · Journal of Applied Physics · 1969 · 1.7K citations
The impact of gate-induced drain leakage current on MOSFET scaling