Extension of RESURF principle to dielectrically isolated power devices

Abstract

The RESURF (reduced surface field) principle has been extended to dielectrically isolated power devices including the effect of the formation of an inversion layer under the isolating oxide. Two device structures that allow high voltage operation have been investigated. Extensive two-dimensional simulations have been performed to relate the breakdown voltage to the doping and length of the drift region, and the thicknesses of the silicon layer and isolating oxide. It has been shown that lateral devices with breakdown voltages up to 600 V can be obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>