IEEE Transactions on Electron Devices · 1986 · 41 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsField-effect TransistorsP-n JunctionsWide-bandgap Semiconductor DevicesBreakdown VoltageLateral Power DevicesP-n Junction Characteristics
The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of the 1200-V DMOSFET is 4 times less than its 1200-V n-p-n BJT counterpart. The major contribution to high BJT on-resistance comes from the series JFET pinch resistance.
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High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 520 citations
Breakdown mechanism in short-channel MOS transistors
E. Sun, J.L. Moll, Johannes Berger et al. · 1978 · 60 citations
Engineering, Electrical Engineering, Electronic Materials +14
New high voltage IC technology
E.J. Wildi, T. Paul Chow, M.S. Adler et al. · 1984 · 19 citations