Concepedia

Author

N. Yasuhara

Toshiba (Japan)

Also Known As

N. Yasuhara, Norio Yasuhara

26

Publications

296

Citations

10

H-Index

18

Concepts

All Affiliations

Toshiba (Japan)
NY

About

N. Yasuhara is an author at Toshiba (Japan) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

9

9

236

2

Electrical Engineering

9

9

236

3

Microelectronics

8

8

143

4

Applied Physics

6

6

185

5

Integrated Circuits

3

3

130

N. Yasuhara

×

10

Publications

249

Citations

10

H-Index

YearCitations

Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film

A. Nakagawa, N. Yasuhara, Y. Baba

IEEE Transactions on Electron Devices

1991

93

Multi-channel SOI lateral IGBTs with large SOA

H. Funaki, Tomoko Matsudai, A. Nakagawa,

2002

29

Numerical analysis of SOI IGBT switching characteristics-switching speed enhancement by reducing the SOI thickness

Ichiro Omura, N. Yasuhara, A. Nakagawa,

2002

23

Low gate charge 30 V n-channel LDMOS for DC-DC converters

N. Yasuhara, Kazunobu Matsushita, Ken‐ichi Nakayama,

2004

22

High switching speed trench diode for 1200V RC-IGBT based on the concept of Schottky Controlled injection (SC)

Ryohei Gejo, Tsuneo Ogura, Shinichiro Misu,

2016

16

New high voltage SOI device structure eliminating substrate bias effects

A. Nakagawa, Yutaro Yamaguchi, N. Yasuhara,

2002

14

200°C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 μm thick SOI

A. Nakagawa, Y. Yamaguchi, Tomoko Matsudai,

2002

14

Experimental verification of large current capability of lateral IEGTs on SOI

N. Yasuhara, H. Funaki, Tomoko Matsudai,

2002

13

Ideal carrier profile control for high-speed switching of 1200 V IGBTs

Ryohei Gejo, Tsuneo Ogura, Shinichiro Misu,

2014

13

New 500V output device structures for thin silicon layer on silicon dioxide film

A. Nakagawa, N. Yasuhara, Y. Baba

2005

12

Page 1