Low gate charge 30 V n-channel LDMOS for DC-DC converters

Abstract

We have developed low on-resistance and low feedback gate charge 30 V n-channel LDMOS for MHz switching DC-DC converter applications. The feature of the device is that it has achieved a high avalanche capability of more than 20 amperes together with Ron/spl dot/Qqd value of 10 m/spl Omega/nC, which is the lowest, ever reported for 30 V devices. A low gate resistance of 0.4 /spl Omega/ was achieved by two layer metal electrodes. These features are desirable for MHz switching frequency DC-DC converters to obtain higher efficiency. Good avalanche capability of 20 amperes is achieved under unclamped inductive switching (UIS) condition.