Numerical analysis of SOI IGBT switching characteristics-switching speed enhancement by reducing the SOI thickness

Abstract

The electrical characteristics of SOI (silicon-on-insulator) IGBTs (insulated-gate bipolar transistors), including breakdown voltage are discussed. It is found that the switching speed of an IGBT on a thin SOI is improved by reducing the SOI layer thickness without special design optimization. Carrier recombination at the Si-SiO/sub 2/ interface is shown to affect carriers as if the bulk lifetime were reduced for a thin SOI, thus further improving the switching speed of IGBTs on thin (2- mu m) SOIs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>