Multi-channel SOI lateral IGBTs with large SOA

Abstract

We report, for the first time, the development of 5 ampere multi-channel lateral IGBTs on SOI. The new LIGBTs are characterized by a plural number of parallel stripe poly-silicon gates and resultant plural number of channels, which enhances electron injection and attains a large current capability. The developed LIGBTs conduct current density over 120 A/cm/sup 2/ at the drain voltage of 3 V and simultaneously achieve a fall-time below 300 ns. The LIGBTs have excellent current capability and short circuit withstanding capability of DC 300 V with 500 A/cm/sup 2/ of drain current even at 200/spl deg/C.