IEEE Transactions on Electron Devices · 1990 · 88 citations · 15 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsBreakdown VoltageBreakdown Voltage OptimizationDevice OptimizationEpitaxial Thin FilmsField-effect Transistor SimulationHigh-voltage BreakdownMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet Modeling
The high-voltage behavior of the lateral double-diffused MOS transistor (LDMOST) is investigated using an analytical approach. Expressions for the breakdown voltage of an LDMOST fabricated on both thick and thin epitaxial layers are derived. On the basis of this information, a strategy for the optimization of RESURF LDMOSTs is developed. The accuracy of the analytical expressions is verified by comparison with two-dimensional simulation results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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