IEEE Electron Device Letters · 2008 · 100 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsQuantum TunnelingTunnelingInversion Layer FormationMosfet ModelingTransistor NonlinearityTunneling BarriersTunneling CurrentTunneling Field-effect TransistorsTunneling In SemiconductorsTunneling Phenomena
In this letter, we report a new approach to treat the 2-D nonlinear Poisson's equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer.
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Complementary tunneling transistor for low power application
Pengzhan Wang, K. Hilsenbeck, T. Nirschl et al. · Solid-State Electronics · 2004 · 519 citations
Engineering, Electrical Engineering, Electronic Materials +10