Silicon field-effect transistor based on quantum tunneling

Abstract

This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach ∼1000 Å. Control of tunneling appears to be possible at minimum channel lengths L∼250 Å or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.