Electrical characterizations of Neutron-irradiated SiC Schottky diodes

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Silicon-carbide high-voltage (400 V) Schottky barrier diodes

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The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

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AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons

Hong-Yeol Kim, Jihyun Kim, Sang Pil Yun et al. · Journal of The Electrochemical Society · 2008 · 21 citations

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