IEEE Journal of Solid-State Circuits · 1997 · 21 citations · 12 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesBody ElectronicsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDigital Integrated Circuit DesignDynamic Power ReductionPower ManagementBody BiasingBody EffectCmos Logic CircuitsLow-power Cmos DesignLow-voltage Cmos DesignMemory Circuit DesignSense Amplifier DesignUltra-low-voltage Circuit Design
A low-voltage high-speed 16-Mb SOI-DRAM has been developed using a 0.5-/spl mu/m CMOS/SIMOX technology. A newly introduced "FD-PD mode switching" transistor dynamically switches its operation mode between fully depleted (FD) and partially depleted (PD) according to the body bias voltage, thus it has both PD-mode large current drivability and FD-mode small leakage current. By the body bias control, the transistor operates as if it has an S-factor of 30 mV/decade. Enabling both high speed and low power at a low voltage, 30 mV is only one-half the theoretical value. By utilizing the transistor, we have developed body pulsed sense amplifier (BPS), body driven equalizer (BDEQ), body current clamper (BCC), and body pulsed transistor logic (BPTL) to achieve 46 ns access time at 1 V power supply with suppressed standby current.
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A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
F. Assaderaghi, D. Sinitsky, S. Parke et al. · 2002 · 212 citations
A 0.5 V SIMOX-MTCMOS circuit with 200 ps logic gate
T. Douseki, Satoshi Shigematsu, Y. Tanabe et al. · 2002 · 43 citations
Engineering, Computer Engineering, Electrical Engineering +17