Thermal oxidation temperature dependence of 4H-SiC MOS interface

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Silicon carbide high-power devices

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 441 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

C. Önneby, C. G. Pantano · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 286 citations

Natural Sciences, Materials Engineering, Materials Science +17

XPS study of a SiC film produced on Si(100) by reaction with a C2H2 beam

I. Kusunoki, Y. Igari · Applied Surface Science · 1992 · 123 citations

Engineering, Materials Engineering, Materials Science +12

On the correlation between the carbon content and the electrical quality of thermally grown oxides on <i>p</i>-type 6H–Silicon carbide

Vickram R. Vathulya, Dong Ning Wang, Marvin H. White · Applied Physics Letters · 1998 · 51 citations

Engineering, Materials Engineering, Materials Science +17