IEEE Photonics Technology Letters · 1991 · 49 citations · 10 references
EngineeringLaser ScienceLaser PhysicsLaser ApplicationsSuper-intense LasersSurface-emitting LasersHigh-power LasersLaser ControlRoom-temperature Pulsed OperationOptical PropertiesHigh-temperature Pulsed OperationPulsed Laser DepositionDielectric MirrorsPhotonicsElectrical EngineeringLaser Processing TechnologyLaser ClassificationContinuous-wave Threshold CurrentsAdvanced Laser ProcessingApplied PhysicsOptoelectronics
Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
Y.H. Lee, J. L. Jewell, Axel Scherer et al. · Electronics Letters · 1989 · 182 citations
Low resistance ohmic contacts to n- and p-InP
E. Kuphal · Solid-State Electronics · 1981 · 132 citations