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Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
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1989
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EngineeringLaser ScienceCavity QedLaser ApplicationsLaser PhysicsLaser MaterialSuper-intense LasersHigh-power LasersLaser ControlLaser Micro-processingSemiconductor LasersLaser ManufacturingSurface-emitting MicrolasersPulsed Laser DepositionMolecular Beam EpitaxyPhotonicsQuantum SciencePhysicsPulsed LasingQuantum DeviceUltrafast Laser PhysicsLaser Processing TechnologyLaser DesignAdvanced Laser ProcessingMicrofabricationApplied PhysicsQuantum Photonic DeviceOptoelectronics
The microlasers are fabricated by molecular beam epitaxy of a 100‑Å Ga₀.₈In₀.₂As single quantum well, followed by chemically assisted ion‑beam etching to produce 3–50 µm devices. They achieve room‑temperature continuous‑wave and pulsed lasing at 983 nm with the smallest gain‑medium volumes reported, reaching threshold currents as low as 1.1 mA pulsed and 1.5 mA continuous.
Room-tempeTature continuous and pulsed lasing of verticalcavity, single-quantum-well, surface-emitting microlasers is achieved at μ983nm. The active Ga0.8In0.2As single quantum well is 100 Å thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ionbeam etching. The microlasers are 3–50μm across. The minimum threshold currents are 1.1 mA (pulsed) and l.5mA(CW).