T.E. Reynolds - Concepedia

Concepedia

Author

T.E. Reynolds

University of California, Santa Barbara

Also Known As

T. Reynolds, T.E. Reynolds, Tom E. Reynolds

25

Publications

2.1K

Citations

12

H-Index

51

Concepts

All Affiliations

University of California, Santa Barbara Intel (United States)Conductive Composites (United States)

TR

About

T.E. Reynolds is an author at University of California, Santa Barbara specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	2.1K
2	Applied Physics	11	12	2.1K
3	Electrical Engineering	8	8	2K
4	Physics	5	5	90
5	Computer Engineering	2	2	1.6K

T.E. Reynolds

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14

Publications

2.1K

Citations

12

H-Index

	Year	Citations
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging K. Mistry, R. Chau, Changhwan Choi, Nm Logic TechnologyEngineeringVlsi DesignComputer ArchitectureHigh Volume	2007	825
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors C. Auth, C. Allen, A. Blattner, Low-power Cmos TechnologyEngineeringVlsi DesignTri-gate TransistorsIntegrated Circuits	2012	749
Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product K. Giboney, Radhakrishnan Nagarajan, T.E. Reynolds, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringFirst FabricationTravelling-wave PhotodetectorsEngineering	1995	122
Low threshold, wafer fused long wavelength vertical cavity lasers J.J. Dudley, D.I. Babic, Richard P. Mirin, Applied Physics Letters Vertical Cavity LasersPhotonicsElectrical EngineeringAdvanced Laser ProcessingEngineering	1994	118
Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits Di Liang, Alexander W. Fang, Hyundai Park, Journal of Electronic Materials SemiconductorsPhotonicsElectrical EngineeringWafer Scale ProcessingEngineering	2008	94
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers Hiroshi Wada, D.I. Babic, D. L. Crawford, IEEE Photonics Technology Letters EngineeringLaser ScienceLaser PhysicsLaser ApplicationsSuper-intense Lasers	1991	49
1.54-μm vertical-cavity surface-emitting laser transmission at 2.5 Gb/s S.Z. Zhang, N.M. Margalit, T.E. Reynolds, IEEE Photonics Technology Letters PhotonicsEngineeringOptical AmplificationOptical Transmission SystemLaser Science	1997	32
Experimental evidence for hole transport limited intensity modulation response in quantum well lasers Radhakrishnan Nagarajan, Richard P. Mirin, T.E. Reynolds, Electronics Letters Quantum SciencePhotonicsQuantum PhotonicsEngineeringLaser Science	1993	29
Effect of the confinement-layer composition on the internal quantum efficiency and modulation response of quantum-well lasers Radhakrishnan Nagarajan, Richard P. Mirin, T.E. Reynolds, IEEE Photonics Technology Letters Quantum PhotonicsEngineeringLaser ScienceConfinement-layer CompositionLaser Applications	1992	27
Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode Y.M. Zhang, V. Borzenets, N. Dubash, Journal of Lightwave Technology Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringRf Semiconductor	1997	19

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