Publication | Closed Access
Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser
27
Citations
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References
1989
Year
Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser MaterialSurface-emitting LasersLaser OpticsReflectivity DependenceOptical PropertiesK Continuous OperationPulsed Laser DepositionGraded-reflectivity MirrorsPhotonicsElectrical EngineeringSubmilliampere ThresholdLaser Processing TechnologyLaser-assisted DepositionSi/sio/sub 2/Applied PhysicsOptoelectronicsLaser Damage
A systematic study of changing the reflectivity of a Si/SiO/sub 2/ mirror for 1.3- mu m GaInAsP/InP surface-emitting lasers is discussed. An effective threshold current of 4.5 mA at 77 K continuous operation has been obtained. This indicates a possibility of a submilliampere threshold at 77 K and approximately=20 mA at 300 K by optimizing the mirror reflectivity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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