Applied Physics Letters · 1989 · 266 citations · 5 references
EngineeringElectrical EngineeringOptical MaterialsOptoelectronicsPhotonicsLaser OpticsLaser PhysicsOptical SourcesSemiconductor LasersCavity GrowthContinuous-wave LasersMetalorganic Chemical Vapor DepositionMicrocavity LasersSingle-mode OperationVertical-cavity Surface-emitting Lasers
An ultrashort (~5.5 µm) cavity device was grown by metalorganic chemical vapor deposition and its continuous‑wave lasing characteristics, such as mode properties and temperature dependence, were examined. Room‑temperature continuous‑wave operation of a GaAs vertical‑cavity surface‑emitting laser was achieved, delivering single longitudinal mode lasing with a 35 dB side‑mode suppression ratio over a temperature range exceeding 50 K.
Room-temperature continuous wave (cw) operation of a GaAs vertical microcavity surface-emitting laser has been achieved. An ultrashort cavity device with a cavity length of ∼5.5 μm was grown by metalorganic chemical vapor deposition. cw lasing characteristics such as mode properties and temperature characteristics were examined. Single longitudinal mode operation with a side mode suppression ratio of 35 dB was obtained. The temperature range for single mode operation was more than 50 K.
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