GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser array

Abstract

A metalorganic chemical vapor deposition (MOCVD) was used to grow both double-heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting lasers. A vertical microcavity was formed with a diameter of 10 μm and a cavity length of 6 μm by a two-step MOCVD growth and fully monolithic technology. Threshold currents under room-temperature pulsed conditions ranged from 50 to 100 mA with a minimum of 50 mA. cw operation up to 160 K was obtained. In addition, a densely packed 5×5 SE laser array with 20 μm separation was demonstrated with a minimum threshold of 600 mA.