Submilliamp threshold vertical-cavity laser diodes

Abstract

We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth-power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.