A. Ibaraki

Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions

A. Ibaraki, Kenji Kawashima, K. Furusawa et al. · Japanese Journal of Applied Physics · 1989 · 65 citations

Engineering, Electrical Engineering, Materials Science +16

Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition

Shigehiro Nishino, A. Ibaraki, Hiroyuki Matsunami et al. · Japanese Journal of Applied Physics · 1980 · 40 citations

Engineering, Materials Engineering, Materials Science +17

High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current

R. Hiroyama, Daijiro Inoue, S. Kameyama et al. · Japanese Journal of Applied Physics · 2004 · 21 citations

Engineering, Electrical Engineering, Optoelectronics +15

GaAs buried heterostructure vertical cavity top-surface emitting lasers

A. Ibaraki, K. Furusawa, T. Ishikawa et al. · IEEE Journal of Quantum Electronics · 1991 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser

A. Ibaraki, S. Ishikawa, Shunsuke Ohkouchi et al. · Electronics Letters · 1984 · 11 citations

Engineering, Electrical Engineering, Materials Science +13