IEEE Journal of Quantum Electronics · 1991 · 19 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsOptical SourcesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersDistributed Bragg Reflector LasersHeterostructure LasersHigh-power Semiconductor LasersLaser Gain MaterialsLiquid Phase EpitaxyPower OutputSemiconductor Laser DiodesVertical-cavity Surface-emitting Lasers
Room-temperature continuous wave (CW) operation was achieved using GaAs buried heterostructure vertical cavity top-surface emitting lasers with both GaAlAs/AlAs and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). One-step organometallic vapor phase epitaxy (OMVPE) and two-step liquid phase epitaxy (LPE) growth techniques has been developed. In order to improve the reflectivity of both DBRs, the Bragg wavelength was designed to correspond with a longer mode than the lasing mode under pulsed conditions, and a sufficiently flat planar surface was formed by LPE growth. The threshold current was 17.4 mA, and an output power of up to 0.84 mW was obtained. The lasing wavelength was about 911 nm. A 5*6 common voltage array was used as a trial structure for a two-dimensional array consisting of the buried heterostructure top-surface emitting laser diodes.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
11
Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
Y.H. Lee, B. Tell, K. Brown-Goebeler et al. · Electronics Letters · 1990 · 73 citations
A. Ibaraki, Kenji Kawashima, K. Furusawa et al. · Japanese Journal of Applied Physics · 1989 · 65 citations