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Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser
11
Citations
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References
1984
Year
PhotonicsElectrical EngineeringRoom TemperatureEngineeringLaser ScienceSemiconductor LasersApplied PhysicsLaser ApplicationsLaser PhysicsLaser Processing TechnologyLaser MaterialsSurface-emitting LasersPulsed Laser DepositionLaser-assisted DepositionμMø ElectrodeOptoelectronics
We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 μmø electrode at 77 K under pulsed conditions (λ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
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