Electronics Letters · 1984 · 11 citations · 1 references
EngineeringElectrical EngineeringMaterials SciencePhotonicsSemiconductor DevicesSemiconductor MaterialsLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor Device MaterialsSemiconductor LasersGaas OscillatorsLaser ThresholdPulsed LasersSemiconductor Laser Fabrication
We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 μmø electrode at 77 K under pulsed conditions (λ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
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