R. Hiroyama

AlGaInP visible laser diodes grown on misoriented substrates

Hiroki Hamada, M. Shono, S. Honda et al. · IEEE Journal of Quantum Electronics · 1991 · 109 citations

Materials Science, Aluminium Nitride, Epitaxial Growth +11

AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates

Hiroki Hamada, R. Hiroyama, S. Honda et al. · IEEE Journal of Quantum Electronics · 1993 · 31 citations

Wide-bandgap Semiconductor, Engineering, Multiquantum Barrier +17

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

Hiroki Hamada, M. Shono, S. Honda et al. · Electronics Letters · 1991 · 22 citations

Engineering, Laser Science, Laser Applications +16

High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current

R. Hiroyama, Daijiro Inoue, S. Kameyama et al. · Japanese Journal of Applied Physics · 2004 · 21 citations

Laser Processing (Laser Material Processing), Engineering, Laser Science +21

Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition

Hiroki Hamada, S. Honda, M. Shono et al. · Electronics Letters · 1992 · 21 citations

Materials Science, Materials Engineering, Algainp Epitaxial Layers +13