InGaAsP(1.3 μm)/InP vertical-cavity surface-emitting laser grown by metalorganic vapor phase epitaxy

Abstract

We report InGaAsP/InP vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double-heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15-μm-diam devices with a 1-μm-thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.