High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

A theory of transistor cutoff frequency (f_T) falloff at high current densities

Charles Kirk · IRE Transactions on Electron Devices · 1962 · 574 citations

Engineering, Electrical Engineering, Microelectronics +16

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Engineering, Electrical Engineering, Materials Science +17

Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors

Daniel Benevides da Costa, James S. Harris · IEEE Transactions on Electron Devices · 1992 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Russ Fischer, H. Morkoç̌ · Applied Physics Letters · 1985 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Electron traps in AlGaAs grown by molecular-beam epitaxy

K. Yamanaka, Shigeya Naritsuka, K. Kanamoto et al. · Journal of Applied Physics · 1987 · 72 citations

Engineering, Materials Engineering, Materials Science +17