Concepedia

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov,

Applied Physics Letters · 1999 · 61 citations · 7 references

Abstract

We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 μm. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (∼320–400 °C).

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