A. R. Kovsh

1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition

Yu. M. Shernyakov, D. A. Bedarev, E.Yu. Kondrat’eva et al. · Electronics Letters · 1999 · 132 citations

3.9 W CW power from sub-monolayer quantum dot diodelaser

A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin et al. · Electronics Letters · 1999 · 98 citations

Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

F. Hopfer, A. Mutig, M. Küntz et al. · Applied Physics Letters · 2006 · 96 citations

Photonics, High Modulation Bandwidth, Quantum Photonics +11

Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser

Maria Ana Cataluna, W. Sibbett, D. A. Livshits et al. · Applied Physics Letters · 2006 · 62 citations

Optical Pumping, Photonics, Quantum Science +15

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Applied Physics Letters · 1999 · 61 citations

Lateral Associations, Optical Materials, Engineering +18