Applied Physics Letters · 2006 · 97 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptical SourcesPhotonic Integrated CircuitsQuantum DotsSemiconductor Device MaterialsSemiconductor LasersDifferential EfficiencyHigh-temperature Device OperationModulation BandwidthModulation EfficiencyPower OutputSemiconductor Quantum DotsSingle-mode Semiconductor LasersVertical-cavity Surface-emitting Lasers
Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz. A low threshold current of 170μA, high differential efficiency of 0.53W∕A, and high modulation current efficiency factor of 14GHz∕mA are realized from a 1μm oxide aperture single-mode device with a side mode suppression ratio of >40dB and peak output power of >1mW. The lasers are also suitable for high temperature operation.
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Diode Lasers and Photonic Integrated Circuits
L.A. Coldren · Optical Engineering · 1997 · 1.7K citations
Materials Today · 2004 · 175 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
High-frequency modulation of oxide-confined verticalcavity surface emitting lasers
K.L. Lear, A. Már, K.D. Choquette et al. · Electronics Letters · 1996 · 161 citations · Full text
Sasan Fathpour, Zetian Mi, P. Bhattacharya · Journal of Physics D Applied Physics · 2005 · 141 citations · Full text