High-speed quantum dot lasers

Abstract

The modulation bandwidth of conventional 1.0–1.3 µm self-organized In(Ga)As quantum dot (QD) lasers is limited to ∼6–8 GHz due to hot carrier effects arising from the predominant occupation of wetting layer/barrier states by the electrons injected into the active region at room temperature. Thermal broadening of holes in the valence band of QDs also limits the performance of the lasers. Tunnel injection and p-doping have been proposed as solutions to these problems. In this paper, we describe high-performance In(Ga)As undoped and p-doped tunnel injection self-organized QD lasers emitting at 1.1 and 1.3 µm. Undoped 1.1 µm tunnel injection lasers have ∼22 GHz small-signal modulation bandwidth and a gain compression factor of 8.2 × 10−16 cm3. Higher modulation bandwidth (∼25 GHz) and differential gain (3 × 10−14 cm2) are measured in 1.1 µm p-doped tunnel injection lasers with a characteristic temperature, T0, of 205 K in the temperature range 5–95°C. Temperature invariant threshold current (infinite T0) in the temperature range 5–75°C and 11 GHz modulation bandwidth are observed in 1.3 µm p-doped tunnel injection QD lasers with a differential gain of 8 × 10−15 cm2. The linewidth enhancement factor of the undoped 1.1 µm tunnel injection laser is ∼0.73 at lasing peak and its dynamic chirp is <0.6 ° at various frequencies and ac biases. Both 1.1 and 1.3 µm p-doped tunnel injection QD lasers exhibit zero linewidth enhancement factor (α ∼0) and negligible chirp (< 0.2 °). These dynamic characteristics of QD lasers surpass those of equivalent quantum well lasers.