Program window of doped Sb2Te phase change line cells

Abstract

The magnitude of the reset current of doped Sb2Te line cells is determined. The lowest measured reset current is 280μA. It is shown that the larger part of the program energy flows into the surrounding dielectric of the line. Extrapolation of the results in a scaling scenario reveals that a minimum reset current of 50μA can be achieved using a supply voltage of 1.2V. The set voltage is shown to be limited by the threshold voltage. Finally, it is observed that the threshold switching event has a voltage dependent delay time.