Threshold Switching Materials

Threshold Switching Materials is a class of memristive materials that exhibit a reversible, electric field-induced transition from a high-resistance state to a low-resistance state only when an external voltage threshold is exceeded, enabling selective addressing in crossbar memory arrays.

329

Publications

16.7K

Citations

1.5K

Authors

357

Institutions

Publications per year

2017–2026

199

Authors

1.5K

  1. HH
    Hyunsang Hwang

    Pohang University of Science and Technology, South Korea

    18 publications · 869 citations

    18

    h-index

  2. HH
    H.K. Henisch

    Pennsylvania State University, United States

    11 publications · 786 citations

    11

    h-index

  3. SC
    Sergiu Clima

    IMEC, Belgium

    8 publications · 246 citations

    8

    h-index

  4. JW
    Jiyong Woo

    Pohang University of Science and Technology, South Korea

    8 publications · 405 citations

    8

    h-index

  5. XM
    Xiangshui Miao

    Huazhong University of Science and Technology, China

    7 publications · 371 citations

    8

    h-index

1–5 of 1.5K

Venues

  1. Applied Physics Letters

    36 publications · 1.5K citations

    22

    h-index

  2. IEEE Electron Device Letters

    17 publications · 1.5K citations

    18

    h-index

  3. Advanced Electronic Materials

    15 publications · 639 citations

    15

    h-index

  4. Advanced Functional Materials

    12 publications · 1.7K citations

    13

    h-index

  5. Journal of Non-Crystalline Solids

    15 publications · 540 citations

    12

    h-index

1–5