Threshold Switching Materials
Threshold Switching Materials is a class of memristive materials that exhibit a reversible, electric field-induced transition from a high-resistance state to a low-resistance state only when an external voltage threshold is exceeded, enabling selective addressing in crossbar memory arrays.
329
Publications
16.7K
Citations
1.5K
Authors
357
Institutions
Publications per year
2017–2026
199
Parents
329
An Artificial Neuron Based on a Threshold Switching Memristor
Xumeng Zhang, Wei Wang, Qi Liu et al. · IEEE Electron Device Letters · 2017 · 396 citations
1–5 of 329
1.5K
Pohang University of Science and Technology, South Korea
18 publications · 869 citations
18
h-index
11
h-index
8
h-index
8
h-index
8
h-index
1–5 of 1.5K
357
Pohang University of Science and Technology
Pohang, South Korea
18 h-index
84 publications
3.5K citations

Chinese Academy of Sciences
Beijing, China
18 h-index
102 publications
8.6K citations
Institute of Microelectronics
Beijing, China
15 h-index
48 publications
3.2K citations

Huazhong University of Science and Technology
Wuhan, China
13 h-index
89 publications
4.7K citations

Pennsylvania State University
State College, United States
13 h-index
41 publications
2.2K citations
Fudan University
Shanghai, China
12 h-index
41 publications
2.2K citations
University of Chinese Academy of Sciences
Beijing, China
11 h-index
64 publications
7.8K citations
RWTH Aachen University
Aachen, Germany
11 h-index
49 publications
3.6K citations
1–8 of 357
36 publications · 1.5K citations
22
h-index
17 publications · 1.5K citations
18
h-index
15 publications · 639 citations
15
h-index
12 publications · 1.7K citations
13
h-index
15 publications · 540 citations
12
h-index
1–5