Concepedia

Breakdown and degradation issues and the choice of a safe load line for power HFET operation

D. Dieci, R. Menozzi, T. Tomasi, Giovanna Sozzi, C. Lanzieri, C. Canali

2002 · 10 citations · 11 references

Abstract

This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.

References

11

Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies

P.H. Ladbrooke, Stephen Blight · IEEE Transactions on Electron Devices · 1988 · 172 citations

Engineering, Electrical Engineering, Microelectronics +16

A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs

S.R. Bahl, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 1993 · 166 citations

Engineering, Electrical Engineering, Instrumentation +12

Breakdown walkout in pseudomorphic HEMT's

R. Menozzi, P. Cova, C. Canali et al. · IEEE Transactions on Electron Devices · 1996 · 92 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs

Mark Somerville, R.R. Blanchard, Jesús A. del Alamo et al. · IEEE Electron Device Letters · 1998 · 50 citations

Engineering, Electrical Engineering, Microelectronics +10

Dependence of ionization current on gate bias in GaAs MESFETs

C. Canali, A. Neviani, C. Tedesco et al. · IEEE Transactions on Electron Devices · 1993 · 47 citations

Engineering, Electrical Engineering, Electronic Materials +13