C. Lanzieri

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Transactions on Electron Devices · 2014 · 185 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Transient Measurements +14

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

F. Nava, E. Vittone, P. Vanni et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2003 · 118 citations · Full text

Radiation Tolerance, Radiation Detection, Physics +3

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Enrico Zanoni, Francesca Danesin, Matteo Meneghini et al. · IEEE Electron Device Letters · 2009 · 89 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Minimum Ionizing and Alpha Particles Detectors Based on Epitaxial Semiconductor Silicon Carbide

F. Nava, P. Vanni, M. Bruzzi et al. · IEEE Transactions on Nuclear Science · 2004 · 81 citations

Electrical Engineering, Sic Epitaxial Layer, Engineering +15

Silicon carbide for high resolution X-ray detectors operating up to 100°C

G. Bertuccio, R. Casiraghi, A. Cetronio et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2004 · 78 citations

Materials Science, Engineering, Physics +7