R.R. Blanchard

On-state breakdown in power HEMTs: measurements and modeling

Mark Somerville, R.R. Blanchard, Jesús A. del Alamo et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Boron diffusion in polycrystalline silicon layers

S. Horiuchi, R.R. Blanchard · Solid-State Electronics · 1975 · 50 citations

Boron Nitride, Boron Diffusion, Physics +3

A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs

Mark Somerville, R.R. Blanchard, Jesús A. del Alamo et al. · IEEE Electron Device Letters · 1998 · 50 citations

Electrical Engineering, Engineering, On-state Breakdown +6

Hydrogen-induced piezoelectric effects in InP HEMT's

R.R. Blanchard, Jesús A. del Alamo, Samuel B. Adams et al. · IEEE Electron Device Letters · 1999 · 31 citations

Materials Science, Electrical Engineering, Engineering +14

Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films

B-Y. Tsaur, Vincent J. Sferrino, Hyonkwang Choi et al. · IEEE Transactions on Nuclear Science · 1986 · 20 citations

Si Films, Engineering, Integrated Circuits +16